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| BUZ 60 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 60 VDS 400 V ID 5.5 A RDS(on) 1 Package TO-220 AB Ordering Code C67078-S1312-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 5.5 Unit A ID IDpuls 22 TC = 36 C Pulsed drain current TC = 25 C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 5.5 8 mJ ID = 5.5 A, VDD = 50 V, RGS = 25 L = 18.5 mH, Tj = 25 C Gate source voltage Power dissipation 320 VGS Ptot 20 75 V W TC = 25 C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 1.67 75 E 55 / 150 / 56 C K/W 1 07/96 BUZ 60 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 400 3 0.1 10 10 0.65 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 A VDS = 400 V, VGS = 0 V, Tj = 25 C VDS = 400 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS 100 nA 1 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 3.5 A Semiconductor Group 2 07/96 BUZ 60 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 2.5 4.3 780 120 50 - S pF 1050 180 80 ns 20 30 VDS 2 * ID * RDS(on)max, ID = 3.5 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 2.7 A RGS = 50 Rise time tr 50 75 VDD = 30 V, VGS = 10 V, ID = 2.7 A RGS = 50 Turn-off delay time td(off) 130 150 VDD = 30 V, VGS = 10 V, ID = 2.7 A RGS = 50 Fall time tf 70 90 VDD = 30 V, VGS = 10 V, ID = 2.7 A RGS = 50 Semiconductor Group 3 07/96 BUZ 60 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A 1 350 3 5.5 22 V 1.2 ns C Values typ. max. Unit ISM VSD trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = 11 A Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/96 BUZ 60 Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 10 V 6.0 A 80 W 5.0 Ptot ID 60 4.5 4.0 50 3.5 3.0 2.5 40 30 2.0 1.5 1.0 20 10 0 0 0.5 0.0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 2 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 K/W A ID 10 1 t = 21.0s p ZthJC 10 0 100 s =V DS /I D 1 ms 10 -1 D = 0.50 0.20 0.10 10 0 10 ms R DS (o n) 10 -2 0.05 0.02 0.01 DC 10 -1 single pulse V 10 3 10 0 10 1 10 2 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 60 Typ. output characteristics ID = (VDS) parameter: tp = 80 s 13 A 11 Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 3.2 a b c d Ptot = 75W l kj i h g f VGS [V] RDS (on) 2.4 ID 10 9 8 7 6 5 e a b c d e 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 2.0 df g h i 1.6 c j k l 1.2 e f gh ij 4 3 b 0.8 k 2 1 0 0 4 8 12 16 a 0.4 VGS [V] = a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 0.0 V 22 0 2 4 6 8 A 12 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max 10 A parameter: tp = 80 s, VDS2 x ID x RDS(on)max 8.0 S ID 8 7 6 5 4 3 gfs 6.0 5.0 4.0 3.0 2.0 2 1 0 0 1.0 0.0 1 2 3 4 5 6 7 8 V 10 0 1 2 3 4 5 6 VGS A ID 8 Semiconductor Group 6 07/96 BUZ 60 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 3.5 A, VGS = 10 V 4.5 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 RDS (on) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 98% VGS(th) 3.6 3.2 2.8 2.4 2.0 typ 2% 98% typ 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 C 160 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 2 nF C 10 0 A IF 10 1 Ciss 10 -1 Coss 10 0 Tj = 25 C typ Crss Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 10 -1 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 60 Avalanche energy EAS = (Tj ) parameter: ID = 5.5 A, VDD = 50 V RGS = 25 , L = 18.5 mH 340 mJ Typ. gate charge VGS = (QGate) parameter: ID puls = 8 A 16 V EAS 280 240 VGS 12 10 200 8 0,2 VDS max 0,8 VDS max 160 120 6 80 40 0 20 4 2 0 40 60 80 100 120 C 160 0 10 20 30 40 50 nC 65 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 480 V 460 V(BR)DSS 450 440 430 420 410 400 390 380 370 360 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 07/96 BUZ 60 Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96 |
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